PM150CLA120【PDF 3/6 页】MOD IPM L-SER 6PAC 1200V 150A

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POWEREX, INC., 200 E. HILLIS STREET, YOUNGWOOD, PENNSYLVANIA 15697-1800 (724) 925-7272

PM150CLA120

INTELLIMOD? L-SERIES

THREE PHASE IGBT INVERTER

150 AMPERES/1200 VOLTS

ELECTRICAL AND MECHANICAL CHARACTERISTICS, T j = 25°C unless otherwise speci?ed

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

IGBT INVERTER SECTOR

COLLECTOR-EMITTER CUTOFF CURRENT

DIODE FORWARD VOLTAGE

COLLECTOR-EMITTER SATURATION VOLTAGE

I CES

V EC

V CE(SAT)

V CE = V CES , V D = 15V, T J = 25°C

V CE = V CES , V D = 15V, T J = 125°C

-I C = 150A, V CIN = 15V, V D = 15V

V D = 15V, V CIN = 0V, I C = 150A,

—

—

—

—

—

—

2.5

1.8

1.0

10

3.5

2.3

MA

MA

VOLTS

VOLTS

T J = 25°C

V D = 15V, V CIN = 0V, I C = 150A,

—

1.9

2.4

VOLTS

T J = 125°C

INDUCTIVE LOAD SWITCHING TIMES

T ON

0.5

1.0

2.5

μS

T RR

T C(ON)

T OFF

T C(OFF)

V D = 15V, V CIN = 0 ? 15V

V CC = 600V, I C = 150A

T J = 125°C

—

—

—

—

0.5

0.4

2.0

0.7

0.8

1.0

3.0

1.2

μS

μS

μS

μS

CONTROL SECTOR

SHORT CIRCUIT TRIP LEVEL

SHORT CIRCUIT CURRENT DELAY TIME

OVER TEMPERATURE PROTECTION

(DETECT T J OF IGBT CHIP)

SUPPLY CIRCUIT UNDER-VOLTAGE PROTECTION

(-20 ≤ T J V 125°C)

CIRCUIT CURRENT

INPUT ON THRESHOLD VOLTAGE

INPUT OFF THRESHOLD VOLTAGE

FAULT OUTPUT CURRENT*

FAULT OUTPUT PULSE WIDTH*

SC

T OFF(SC)

OT

OT R

UV

UV R

I D

V TH(ON)

V TH(OFF)

I FO(H)

I FO(L)

T FO

-20°C ≤ T J ≤ 125°C, V D = 15V

V D = 15V

TRIP LEVEL

RESET LEVEL

TRIP LEVEL

RESET LEVEL

V D = 15V, V CIN = 15V, V N1 -V NC

V D = 15V, V CIN = 15V, V XP1 -V XPC

APPLIED BETWEEN U P -V UPC ,

V P -V VPC , W P -V WPC , U N - V N - W N -V NC

V D = 15V, V CIN = 15V

V D = 15V, V CIN = 15V

V D = 15V

300

—

135

—

11.5

—

—

—

1.2

1.7

—

—

1.0

—

0.2

145

125

12.0

12.5

18

6

1.5

2.0

—

10

1.8

—

—

155

—

12.5

—

28

12

1.8

2.3

0.01

15

—

AMPERES

μS

°C

°C

VOLTS

VOLTS

MA

MA

VOLTS

VOLTS

MA

MA

MS

*FAULT OUTPUT IS GIVEN ONLY WHEN THE INTERNAL SC, OT AND UV PROTECTIONS SCHEMES OF EITHER UPPER OR

LOWER DEVIDE OPERATE TO PROTECT IT.

** IF YOU USE THIS VALUE, R TH(F-A) SHOULD BE MEASURED JUST UNDER THE CHIPS.

***WITH RIPPLE SATISFYING THE FOLLOWING CONDITIONS: DV/DT SWING ≤ ±5V/μS, VARIATION ≤ 2V PEAK TO PEAK.

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